Ellipsometry measurements: Al2O3 on a 200 mm silicon wafer using trimethylaluminum (TMA) and H2O precursors with film thickness 100 nm and variation within the 200 mm wafer 0.28% and ZnO on a 200 mm silicon wafer using diethylzinc (DEZ) and H2O precursors with film thickness 93 nm and variation within the 200 mm wafer 0.3%.